Abstract
The integration of ferroelectric materials as thin films has attracted considerable attention these last years thanks to their outstanding performances that allow considering new features for the realization of photovoltaic devices. Our study focuses on investigating structural, dielectric and ferroelectric properties of undoped and Mn doped PZN-4.5PT nanoparticles thin films on Silicon substrate. We fabricate very stable PZN-4.5PT nanoparticles thin films deposited on nanostructured silicon substrate with giant relative dielectric permittivity of 2.76 × 104 and 17.7 × 104 for respectively the undoped and Mn doped thin films. These values are very large compared to those found in single crystals and might be explained by the influence of the gel in which nanoparticles were dispersed. The SEM images show the crystallization of new hexagonal phases on the film surface probably coming from interaction between Si and the gel. The hysteresis loops permitted to determine the spontaneous polarization (Ps), remnant polarization (Pr) and coercive field Ec which are equal to 11.73 μC/cm2, 10.20 μC/cm2 and 20 V/cm, respectively for the undoped nanoparticles thin film and 22.22 μC/cm2, 19.32 μC/cm2 and 20 V/cm respectively for the Mn doped one. These values are high and correspond to the best ones found in literature compared to typical ferroelectric thin films.
Highlights
For semiconductor photovoltaic materials, photons with energy higher than the band gap are absorbed to produce electron-hole pairs which are separated by the internalfield in the p-n junction and collected by the electrodes
Our study focuses on investigating structural, dielectric and ferroelectric properties of undoped and Mn doped PZN-4.5PT nanoparticles thin films on Silicon substrate
We fabricate very stable PZN-4.5PT nanoparticles thin films deposited on nanostructured silicon substrate with giant relative dielectric permittivity of 2.76 × 104 and 17.7 × 104 for respectively the undoped and Mn doped thin films
Summary
Photons with energy higher than the band gap are absorbed to produce electron-hole pairs which are separated by the internalfield in the p-n junction and collected by the electrodes. Ferroelectric lead compounds having a perovskite structure, such as Pb(Zn1/3Nb2/3)O3 (PZN) [10], Pb(Mg1/3Nb2/3)O3 (PMN) [11], and their solid solutions with PbTiO3 (PT), have been investigated for high performance ultrasonic transducer applications [12] [13] [14] [15] [16] These solid solutions have excellent piezoelectric and ferroelectric properties in single crystal form compared to the above ferroelectrics. PZN-PT could be one of the promising new materials for such ferrophotovoltaic devices These last years, high levels of papers have been published about PMN-PT and PZN-PT single crystals [17] [18] [19] [20], showing at least ferroelectric, ferroelastic and piezoelectric properties 10 times higher than those of PZT. If we fabricate the nanoparticles thin film of such materials without losing ferroelectricity or photovoltaic properties, we can expand the ferroelectric device to various substrates, structures, and nano-scale applications
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