Abstract
Lead zirconate titanate (PZT) thin films were deposited by radio-frequency (r.f.) magnetron sputtering with stoichiometric single oxide target on silicon substrates. The influence of the growth conditions (with or without substrate heating) and the post-annealing treatments (conventional or rapid thermal annealing) on the film properties in terms of structure and microstructure was systematically evaluated. The electrical properties such as the dielectric constant, the loss factor, the leakage current and the ferroelectric properties have been characterized.
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