Abstract
Highly (111) preferred oriented PbZr0.53Ti0.47O3/Pb(Mg1/3Nb2/3)0.62Ti0.38O3/PbZr0.53Ti0.47O3 (PZT/PMNT/PZT) trilayered ferroelectric thin films were prepared on (111)Pt/Ti/SiO2/Si substrates. At room temperature, the films have a dielectric constant of 2175 that decreases to 1870 and a dielectric loss of 0.05 that increases to 0.06 with increasing frequency between 102 and 105Hz. Also, they exhibit well saturated polarization-versus-electric field hysteresis loops with a large remnant polarization of 13.4μC/cm2 and a low coercive field of 30kV/cm. The leakage current density in the trilayered films is 4.1×10−10A/cm2, which increases to 4.0×10−7A/cm2 with increasing electric field between 1 and 140kV/cm. Such properties of (111) preferred oriented PZT/PMNT/PZT trilayered films lead naturally to possibilities for ferroelectric capacitors and memories.
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