Abstract
Almost single‐phase diamond films with sp3 bonds are synthesized on Si at temperatures as low as 600 °C by a triode‐assisted sputtering system with an electric mirror. The growth rate varies between 1 and 10 nm/min. The rate depends on the deposition parameters, including substrate temperature, gas pressure, He gas fraction. The diamond is found to nucleate on a double‐layered interlayer formed on the Si surface, consisting of a 3–7 nm thick granular W layer condensed on a 3–15 nm amorphous SiC layer. The structure of this interlayer arises from the preferential diffusion of C atoms into the Si substrate. The density of diamond nucleation reaches 109–1010 cm−2. This density does not depend on the pretreatment of the substrate surface. The preferential crystallite orientation occurs along the 〈111〉 or 〈110〉 directions, and is well controlled by the He fraction during sputtering.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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