Abstract
We fabricated a diamond diode, namely a Schottky-pn diode (SPND), which is composed of a fully depleted n-type active layer sandwiched between a highly doped p-type layer and a Schottky metal layer. The SPND has superior characteristics that overcome the weak points of both a Schottky barrier diode and a pn diode. That is, the SPND showed high current density (over 4000 A/cm2) with low specific resistance (0.4 mΩ cm2) at a forward bias of 6 V while maintaining a high rectification ratio of ∼1010. Moreover, the SPND showed extremely fast turn-off speed of nanosecond order.
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