Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

Abstract

A diamond metal-semiconductor field-effect transistor (MESFET) with a Pt Schottky gate was fabricated. The MESFET exhibited clear saturation and pinchoff characteristics. The drain current of the MESFET operated at 300 °C was 20 times higher than that at room temperature due to the activation of acceptors. The breakdown voltage was highly dependent on the gate-drain length and reached 1.5 kV at a gate-drain length of 30 μm, which is the highest reported for a diamond FET.