Abstract
A p-type diamond metal semiconductor field-effect transistor (MESFET) structure, utilizing a boron pulse-doped layer as the conducting channel, has been successfully fabricated. The pulse-doped structure consists of an undoped diamond buffer layer, a highly doped thin diamond active layer, and an undoped diamond cap layer grown by the microwave plasma assisted chemical vapor deposition method. It is shown that this field-effect transistor with a gate length of 4 μm and the gate width of 39 μm exhibits an extrinsic transconductance of 116 μS/mm with both pinch-off characteristics and current saturation.
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