Diamond-like carbon films with End-Hall ion source enhanced chemical vapour deposition

Abstract

A custom-designed End-Hall ion source was used to deposit diamond-like carbon (DLC) films in a plasma enhanced chemical vapour deposition (PECVD) mode. The deposition system was characterised and optimised for infrared transmission enhancement applications and large area deposition onto silicon or germanium substrates. Ion bombardment energy (in eV) on substrate was found to scale about 60% of the discharge voltage. Uniformity was about 2.5% and 5% for substrate diameters of 20 cm and 40 cm respectively. For the infrared enhancement applications the optimised ion bombardment energy was about 54 eV with a high deposition rate approximate 30 nm/min. Coating the DLC onto a single side of double-sided polished silicon wafers resulted in a transmission of 69.5% in the wavelength of about 4 μm, very close to the ideal value. Mechanical and reliability properties of the DLC films on silicon wafers were analysed at different environmental conditions. It was found that the DLC films produced in the ion source PECVD deposition system were satisfied with the requirements for the infrared transmission enhancement applications.