Large area of DLC films with end-hall ion source enhanced chemical vapour deposition

Abstract

The end-hall ion source was used to deposit diamond-like carbon (DLC) films in a plasma enhanced chemical vapour deposition (PECVD) mode. The deposition system was characterized and optimized for infrared transmission enhancement applications and large area deposition onto silicon or germanium substrates. End-hall ion source and its ion beam current density distribution were discussed firstly. Secondly the diamond-like carbon (DLC) films were deposited by End-hall ion source in order to obtain large area DLC films. A great lot of technological experiments were done with various technological parameters, including anode voltage, distance from ion source to substrate for finding out the influence of technological parameters on film thickness uniformity. Thin film thickness was measured using ellipsometer in the wavelength from 400 to 1600nm. Finally, the influences of technological parameters on film uniformity were achieved, large area DLC films were obtained, with diameter 200mm, relative thickness error less than 5%. The DLC deposited on a single side of double-sided polished silicon wafers resulted in a transmission of 69.5% in the wavelength of about 4 μm closes to an ideal value.