Abstract
A diamond field-emission triode with low gate turn-on voltage of 10 V and high gain factor of 250 is reported. The gated diamond triode was fabricated with a self-aligning gate technique from a silicon-on-insulator wafer. Ia–Vg plot of emission characteristics from four tips shows a very low gate turn-on voltage of 10 V and high emission current of 4 μA at gate voltage of 20 V. Ia–Va plots of emission characteristics demonstrate the desired saturation behavior of field-emission transistor with a high voltage gain of 250. The low turn-on gate voltage and high gain factor are comparable to solid-state metal–oxide–semiconductor field-effect transistor devices, confirming the diamond field-emission triode has significant potential for integrated circuit-compatible vacuum microelectronic applications.
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