Abstract
Over the past few years a variety of diamond electron devices have been fabricated, analysed and simulated. This includes Schottky diodes on boron-doped p+ diamond substrates, boron/nitrogen pn-junction diodes, bipolar transistors based on this pn-junction and field effect transistors (FETs) with boron delta-doped channels and hydrogen-related surface conductive layers. Many of the fabricated devices considered here represent the current state-of-the-art in this field. This includes the operation of diamond Schottky diodes at temperatures of up to 1000 °C, as well as diamond FET devices with a cut-off frequency of 30 GHz and channel current densities of 300 mA mm−1. Simulations show that diamond boron delta-doped FETs might yield an RF-output power density of up to 30 W mm−1.
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