Abstract
Diamond-based p-i-n light-emitting diodes capable of single-photon emission in the visible spectral region at room temperature are discussed. The diodes were fabricated on a high quality single crystal diamond grown by chemical vapor deposition. Implantation of boron and phosphorus ions followed by annealing at a temperature of 1600 °C has been used for doping p-type and n-type areas, respectively. Electrical characterization of the devices demonstrates clear diode behavior. Spectra of electroluminescence generated in the i-area reveal sole emission from the neutral nitrogen-vacancy (NV) defects. Photon antibunching implies single-photon character of this emission when generated by individual NV defects.
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