Abstract
Abstract We present the χ dia of a hydrogenic donor in low lying excited states like 2s, 2p± and 2p0 in a GaAs/ AlxGa1−xAs Quantum Well for various Al compositions x both in the parabolic and non-parabolic conduction band model using the variational method. To our knowledge there has been no such reports both theoretically and experimentally in the literature. It was observed that χ dia increases with increase of x for both the parabolic and non-parabolic cases. The effect of non-parabolicity on χ dia is larger for the lower well width region for 2s and 2p± states. Interestingly, we observe a “turn over” in the variation of χ dia against well widths in the lower well width region, a trend which is similar to the one observed in the variation of binding energy of donors in low lying excited states.
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