Abstract
The nitrogenization of phenyl rings on DIM derivatives not only enhances molecular coplanarity but also stabilizes molecular LUMO levels, favoring charge transfer and improving air stability. Therefore, n-type organic field-effect transistors (OFETs) that are based on DIM-N2C8 with nitrogen atoms on both sides of the phenyl rings exhibit a moderate electron mobility of 0.059 cm2 V-1 s-1 under ambient conditions.
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