Abstract
We have successfully synthesized homoepitaxial diamond films with atomically flat surface by the microwave plasma chemical vapor deposition (CVD) using an extremely low CH 4/H 2 ratio of CH 4/H 2 gas less than 0.15% CH 4/H 2 ratio and Ib(0 0 1) substrates with low misorientation angle ( θ off) less than 1.5°. It was found that surface morphologies of the films strongly depend on a growth condition of CH 4/H 2 ratio and θ off of the substrate and was suggested that the hydrogen etching and the θ off played an important role for the epitaxial diamond film growth with an atomically flat surface. On the other hand, from the cathodoluminescence spectra and Schottky junction properties of these diamond films with atomically flat surface, it has been clarified that these films have actually a high potentiality for electronic devices.
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