Device Reliability of Negative Capacitance Source Pocket Double Gate TFETs: A Study on Temperature and Noise Effects

Abstract

Abstract This study investigates the reliability of a negative capacitance source pocket double gate tunnel field-effect transistor (NC-SP-DGTFET) by examining the effects of temperature and various noise components on its performance. The research focuses on key DC parameters, including the transfer characteristics, subthreshold swing, and the ION/IOFF ratio, evaluated across a temperature range from 250 to 450 K. Additionally, the study explores the radio-frequency performance of the device by assessing how temperature impacts transconductance (gm), cut-off frequency (fT), gate capacitance (Cgg), intrinsic delay, and the transconductance frequency product. Noise performance metrics are also analyzed, focusing on the drain current noise power spectral density (SID) and gate voltage noise power spectral density (SVG). The study considers the contributions of diffusion, generation-recombination (G-R), and flicker noise components and at 300 K, SID and SVG showed peak values of 5.08×10-26 A²/Hz and 2.67×10-16 V²/Hz, 5.73×10-18 A²/Hz and 3.22×10-10 V²/Hz, and 1.33×10-25 A²/Hz and 1.19×10-14 V²/Hz, respectively. The analysis reveals that flicker noise is predominant at lower frequencies, while diffusion noise becomes more significant at higher frequencies. However, G-R noise is the most dominant across all frequencies examined. These findings provide crucial insights for optimizing the design and performance of NC-SP-DGTFETs in low-power applications.