Abstract
Effects of doped impurities on electrical, optical and optoelectronic properties in amorphous hydrogenated silicon (a-Si:H) films have been investigated. Doped and undoped a-Si:H films were prepared by plasma deposition from monosilane diluted with hydrogen containing a preset amount of phosphine or diborane as a dopant gas. A series of systematic data on the relation between preparation conditions, particulary substrate temperature and hydrogen content, photoconductivity, absorption coefficient, etc., and also solar cell design parameters are presented. Device physics and optimum design for the heteroface solar cell are discussed. On the basis of these data, ITO/p-i-n heteroface solar cells have been fabricated. At the present stage of the experiments, a power conversion efficiency of 4.5% is obtained under a sunlight of 80 mW/cm 2. The junction structure and its technology would be valuable for the fabrication of low cost solar cells of large area.
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