Device performances and instabilities of channel engineered amorphous InGaZnO thin film transistors

Abstract

A channel engineered amorphous InGaZnO thin film transistor which is composed of two active channel layers according to the composition ratio and thickness is suggested to enhance the device performance and the device stability. To investigate the annealing treatment on the device performance and instability, conventional thermal annealing and microwave annealing treatments were conducted. The device performances of channel engineered devices are enhanced due to the increased electron concentrations which result from high In contents in the bottom active layer. The device stability is improved due to the combination effects of passivation with top back channel and the high effective barrier height with bottom active layer. Also, the devices treated by microwave annealing show improved device performances and stability.