Device Performance of Heterojunction Tunneling Field-Effect Transistors Based on Transition Metal Dichalcogenide Monolayer

Abstract

The ballistic device performances of monolayer transition metal dichalcogenide (MX2) tunneling field-effect transistors (TFETs) and the drive current enhancement via heterojunction are investigated in this letter via the nonequilibrium Green's function formulism. The ultrathin 2-D body and the direct and designable bandgap by choosing a proper MX2 material are advantageous for the performance of TFETs. Through introducing a common- X heterojunction at the source-channel interface, the ION at the same ION/IOFF ratio can be further enhanced by an order for both n- and p-type TFETs.