Device modelling of non-fullerene organic solar cell with inorganic CuI hole transport layer using SCAPS 1-D

Abstract

Hole transport layer (HTL) plays a significant role in the device performance of organic solar cells. PEDOT:PSS, the most commonly used HTL degrades the device and effects the stability of Organic solar cell (OSC). An alternate material to maximise the output of OSC is necessary. In this paper, a complete simulation study on the performance of (PBDB-T) poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b]dithiophene)-co-(1,3-di(5-thiophene-2-yl)-5,7-bis(2-ethylhexyl)benzo[1,2-c:4,5-c]dithiophene-4,8-dione)]/(ITIC)3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone)-5,5,11,11-tetraki(4-hexylphenyl)-dithieno[2,3-d:2,3-d]-s-indaceno [1,2-b:5,6-b]dithiophene) non-fullerene acceptor (NFA) OSC incorporated with Copper iodide (CuI) as HTL is done using the software SCAPS 1-D. Device modelling is done to study the influence of various technological parameters on the solar cell output. CuI is wider bandgap p-type semiconductor with high stability and available at low cost. The simulation results show that NFA-OSC with CuI as the HTL delivers better efficiency than the conventional structure. Upon optimization, the device output shows Power conversion efficiency (PCE) of 15.68%, Fill Factor (FF) of 79.59%, Short Circuit Current density (Jsc) of 20.1525 mA/cm2 and Open Circuit Voltage (Voc) of 0.9773 V. The values are encouraging to develop NFA-OSC with CuI as the hole transport layer in the near future.