Device Design of Direct Tunneling Memory (DTM) Using Technology Computer Aided Design (TCAD) for Low-Power RAM Applications

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Direct tunneling memory (DTM) is a floating-gate (FG) memory with ultra thin tunnel oxide. Using technology computer aided design (TCAD) to optimize the device parameters, we tried to prolong the retention time of DTM without degrading the operation speed. It has become clear that FG depletion, high substrate concentration, and source/drain offset from FG are essential techniques of improving the retention time. As a consequence, there is the prospect of simultaneously achieving fast program/erase time of 30 ns and long retention time of 10 s with an operation voltage of 3.3 V and tunnel oxide thickness of 1.2 nm.