Abstract
In this study, the electrical characteristics of negative-capacitance junctionless nanowire FETs (NC-JL-NWFET) with an HfO2-based ferroelectric layer are investigated through 3D Sentaurus TCAD and MATLAB simulations. The performances of NC-JL-NWFETs with various aspect ratios (ARs) (i.e., the ratio of horizontal radius to vertical radius), doping concentrations (N), thicknesses of ferroelectric layers (Tfe), and different ferroelectric materials, are studied. The NC-JL NWFETs show improved performances over a broad range of the parameters, compared with the baseline JL-NW-FETs, in terms of subthreshold slope (SS) and on/off drain current ratio (Ion/Ioff). Additionally, the impacts of the mentioned parameters on the negative-capacitance effect are presented in terms of the internal voltage (Vint). The optimal parameters with NC-JL is compared to NWFETs with doping junction (J-NW), and then, showed better performance for low power device applications.
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