Abstract
The effects of plasma chemistry (SiH 4/NH 3, SiH 4/N 2 or SiH 4/N 2O) and deposition conditions (temperature, source power, pressure, SiH 4 percentage and additional Ar flow) during electron cyclotron resonance chemical vapor deposition of SiN X or SiO 2 onto GaAs MESFETs are reported. Device degradation, as measured by the effect on transconductance, threshold voltage, breakdown voltage and gate ideality factor, is due to two mechanisms—passivation of Si dopants in the channel by atomic hydrogen, and near-surface doping or stoichiometry changes induced by ion bombardment or preferential loss of As. Conditions which minimize hydrogen ion and neutral densities produce the least degradation in MESFET performance.
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