Device characterization on monocrystalline silicon grown over SiO<inf>2</inf>by the ELO (epitaxial lateral overgrowth) process

Abstract

MOS and lateral bipolar transistors have been fabricated on epitaxial silicon layers which have been laterally overgrown over SiO 2 . These device characteristics were then compared to those measured on devices fabricated on homo-epitaxial silicon and bulk silicon. The measurements indicate essentially identical MOS device characteristics for all three materials with a typical hole field effect mobility of about 180 cm2/v-s. Lifetime measurements using pulsed C-V techniques on the three materials indicate about an order of magnitude difference between the bulk silicon value and the ELO value with the ELO value being about 20 µS. These lifetime values correlate well with diode and bipolar transistor measurements.