Abstract
MOS and lateral bipolar transistors have been fabricated on epitaxial silicon layers which have been laterally overgrown over SiO 2 . These device characteristics were than compared to those measured on devices fabricated on homoepitaxial silicon and bulk silicon. The measurements indicate essentially identical MOS device characteristics for all three materials with a typical hole field effect mobility of about 180 cm2/vs. Lifetime measurements using pulsed C-V techniques showed essentially the same values for ELO material and homoepitaxial material with the ELO value being about 20 µS for 1015cm-3doping level. These lifetime values correlate will with diode and bipolar transistor measurements.
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