Device Characteristics of Organic Static Induction Transistor Using Copper Phthalocyanine Films and Al Gate Electrode

Abstract

We have fabricated organic static induction transistors (SITs) using copper phthalocyanine (CuPc) films. The organic SITs have a layered structure of Au (drain)/CuPc/Al (gate)/CuPc/Au (source)/glass. The electrical characteristics of SITs show that the source-drain current is controlled by the bias voltage applied to the Al gate electrode and a typical SIT operation with unsaturated current characteristics is examined. Furthermore, excellent characteristics such as low voltage and high speed operation as organic transistors are obtained by choosing an appropriate thickness for each layer.