Abstract

Developments of a surface-analysis apparatus and techniques using a microelectron beam are described. These are based on ultra-high-vacuum scanning electron microscopy (UHV-SEM). Spatial resolution of the UHV-SEM was ∼ 100Å and micro-probe RHEED patterns can also be obtained. A one-dimensional display-type electron-energy-analyzer was developed and attached to the apparatus, with which an angle-resolved energy-analysis can be made at a constant (but changeable) take-off angle for azimuthal range of 75°. Diffraction patterns of either Auger electrons or elastically scattered electrons can be obtained for a micro-region as probed by the μ-probe-beam. These diffraction techniques can be used for the determination of surface structure of a region as small as ∼0.1 × 1 μm 2. These techniques are applied to indium adsorption on Si(111) surfaces.

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