Abstract
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be used in transmit/receive modules which are developed with GaN technology. For Transmit chain two 25 W high power amplifiers that are tuned between 8-10 GHz and 10-12 GHz bands are designed. A low noise amplifier with 2 W survivability and less than 2dB noise figure is designed for receive chain Furthermore, an RF switch that is capable of withstanding 25 W RF power is developed for the selection of transmit or receive chains. Measurement results show that both power amplifiers produce 25 W of power. Low noise amplifier has more than 20 dB small signal gain with less than 2 dB noise figure. RF switch has 50 dB of isolation with less than 1 dB insertion loss.
Highlights
High power capability is an important aspect of nowadays transceiver IC designs
Due to its high bandgap energy, which is approximately three times more than Si and GaAs, can obtain higher breakdown voltages as well as high drain voltages. This high drain voltage forming a power density of 5 W/mm from a single transistor creates a great design advantage when compared to other technologies [2]
This paper presents X-band transmitter and receiver blocks which are and two power amplifiers that can produce 25 W, an low noise amplifier (LNA) and a switch which are designed on GaN process
Summary
High power capability is an important aspect of nowadays transceiver IC designs. Traditionally, these integrated circuits are developed using CMOS and GaAs processes. For protecting circuits from high power RF exposure, receiver circuits typically contain a limiter before the receiver LNA as shown in the figure These limiters are generally produced at a different semiconductor technology which makes them hard to integrate on a same substrate with other components. This gives an advantage of full integration of the transceiver module on the same die. The schematic design, simulation and measurement results are given for the designed MMICs proving dedicated operation These IC's are produced using "0.25 μm Power GaN/SiC HEMT" process of WIN Semiconductors
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