Abstract
This paper details the potential of GaN HEMT technology for RF high power amplifiers (HPA), low noise amplifiers (LNA) and high linearity amplifiers with practical application examples. Large GaN HEMT powerbars are measured in a 50-iquest-system at 2 GHz. Measurements show excellent characteristics in terms of power, linearity and noise. This combination of high power and low noise performance allows the realization of highly linear LNAs, which could significantly reduce protection and filter efforts at receiver inputs.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
