Abstract
Abstract The Ultra Fast Silicon Detectors (UFSDs) are a new kind of silicon detectors based on Low Gain Avalanche Diodes technology. The UFSDs are optimised for time measurements with the goal of both excellent space and time resolution, which makes them a very good candidate for 4D tracking. In this paper, we will briefly explain their innovative design and show the status of the latest development. Recent measurements at the H8 beam line (CERN) will be reported, based on the UFSDs from two manufacturers: FBK and HPK. In particular, UFSDs of different thicknesses, with different doping concentrations and with different dopants of the gain layer have been studied. A time resolution of 35 ps has been achieved for a 50 μ m thick design and the results have been found to be in very good agreement with the expectations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
