Abstract
The development of a micromachining technique for processing arbitrary structures with high aspect ratios in bulk silicon is presented. It is based on utilizing standard microelectronic processes and electrochemical macropore formation onn-type silicon in electrolytes containing hydrofluoric acid. This pore-etching technique allows us to produce very regular pore arrays with pore diameters and distances in the micrometer range and pore lengths up to wafer thickness. Samples with prefabricated pore arrays which differ in pore spacing, pore diameter and geometry are used as substrates for a micromachining process. The pores will facilitate the anisotropic etch profile which is required for the desired high aspect ratios although an isotropic etch process is used. Very deep microstructures with steep pore walls and aspect ratios of 10–15 are produced with this technique. It is shown that smaller pore array dimensions improve microstructure resolution.
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