Abstract
The formation of thermal double donors (TDDs) during the iso-thermal annealing at 450 °C in low-oxygen and high-resistivity silicon was quantitatively investigated, and the oxygen related power parameter for low-oxygen and high-resistivity silicon was obtained. Excessive TDDs formed in the p-type high-resistivity silicon during the device manufacturing process will invert the conductivity to n-type. A quantitative relationship between the critical wafer start resistivity and oxygen concentration in p-type high-resistivity silicon was obtained. The p-type conductivity can be maintained after the device fabrication by controlling the resistivity below the critical resistivity corresponding to the oxygen concentration in p-type high-resistivity silicon.
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