Abstract
Formation of thermal double donors (TDDs) by aggregation of interstitially dissolved oxygen (Oi) was investigated for an oxygen-enriched Ge in an annealing at 300-500°C by infrared absorption spectroscopy. The formation of TDDs was supposed to be two reactions: In the primary stage of annealing, the merge reaction of two Ois is dominant to form an oxygen-dimer as a TDD nucleus. In the secondary stage, TDDs grow larger by absorbing an Oi is dominant. At higher temperatures dissociation of TDDs should be included. In the thermal equilibrium state at 325-400°C TDD involves 16-19 Oi in average.
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