Development of Structure in Silicon Nitride Grain Boundaries

Abstract

Parameters that influence the development of structure in silicon nitride grain boundaries were investigated by comparing grain boundary phase crystallization in two systems. Quantitative XEDS and Transmission Electron Microscopy were used to characterize the crystallization processes. Grain boundary garnet crystallized into a large network structure with secondary silicon nitride precipitating on existing grains. Cordierite crystallized outwards from the center of second phase pockets producing a fine polycrystalline oxide structure with a dispersion of small secondary silicon nitride grains. Structures of oxide/glass interfaces were compared.