Abstract
Lead Zirconate Titanate Oxide (PbZr<sub>x</sub>Ti<sub>1-x</sub>O<sub>3</sub> or PZT) thin films have been widely used in various microsensors and microactuators for their high bandwidth and sensitivity. A typical configuration is to use a Pt/Ti bi-layer as the bottom electrode. Before the PZT film is deposited, Pt/Ti bi-layer must be annealed at high temperature (e.g., 800°C) to obtain a condensed structure with a rough micro surface texture. A condensed Pt/Ti structure prevents delamination of the bottom electrode, while a rough micro surface texture ensures PZT thin films anchored firmly onto the bottom electrodes. Although the annealing process is necessary, its high temperature causes Pt/Ti bi-layer to become porous, thus degrading electrical and ferroelectric properties of the PZT thin films. In this paper, we present a non-porous Pt/Ti bottom electrode via a two-step deposition and annealing process. The first step is the traditional fabrication process that leads to a porous Pt/Ti electrode. A second round of deposition and annealing then seals the pores and strengthens the electrode. To evaluate the performance of the non-porous bottom electrode, PZT thin films with porous and non-porous bottom electrodes are fabricated simultaneously. Experimental measurements show that piezoelectric constant <i>d</i><sub>33</sub> of the PZT film increases from 10 pC/N to 20 pC/N when the bottom electrode is changed from the porous to non-porous electrode.
Published Version
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