Abstract
Various silicon rich silicon nitride SiNx films have been deposited by low-pressure chemical vapour deposition (LPCVD) from dichlorosilane SiH 2 Cl 2 and ammonia NH 3 . Deposition rate, refractive index, residual stress and SiN x stoichiometry are studied as a function of deposition parameters, evidencing the main influence of the NH 3 /SiH 2 Cl 2 gas ratio. However, as such SiN x layers have special applications for micro-opto-electro-mechanical systems (MOEMS), the influences of the deposition conditions are more precisely studied for improving the uniformity properties along the load. In order to achieve this goal, different load configurations are tested and the use of non-isothermal furnace profiles is proposed in order to develop the LPCVD deposition technique of SiN x films for industrial microtechnological processes.
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