Development of silicon strip sensors and radiation hardness studies for the PANDA MVD

Abstract

PANDA is one of the major experiments at the future FAIR facility and the Micro Vertex Detector (MVD) is the innermost part of its tracking system. It will be composed of double-sided silicon strip and hybrid pixel detectors and its main task is the high resolution vertex reconstruction. In order to characterize the sensors for the strip barrels of the PANDA MVD, a measurement setup has been developed and prototypes from a first batch have been successfully tested. Performed measurements include global C-V and I-V curves on the entire sensors, as well as single strip C-V characteristics and interstrip capacitances. The radiation hardness of the sensors has been studied using irradiations with neutrons and protons. Global C-V and I-V curves were evaluated before and after each irradiation. The variations of the leakage current and of the full depletion voltage have been studied over a broad range of applied ftuences and the results are in good agreement with the predictions.