Abstract
Developed technology for producing gas-sensitive thin films based on oxides of zinc, titanium and tungsten using the sol-gel process. The relationship of the sol-gel technology of forming semiconductor gas-sensitive films based on TEOS and metal oxides of Zn, Ti, W. the influence of various factors on the properties of the solution on the basis of TEOS with or without dopants were studied. It is established that taking into account the stability of the solution and solubility of the components of the hydrolyzate in the solvent during the synthesis of gas-sensitive films based on oxides of Zn, Ti and W it is advantageous to use ethanol.
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