Abstract

AbstractIn this paper, we describe selective deposition of a major electrode and a protection electrode in a heterojunction with intrinsic thin‐layer (HIT) type solar cell. Sn and Ni were used for the protection electrode to prevent the oxidation of Cu, which was used for the main electrode. SEM and TEM were used to analyze the microstructural evolution and changes in the interface as a result of each electroless deposition. Finally, the performance of our solar cell created via electroless deposition was evaluated. We determined the photovoltaic conversion efficiency (PCE) to be 16.4 %, the fill factor (FF) to be 72.2 %, the open circuit voltage (Voc) to be 681 mV, and the short circuit current (Jsc) to be 33.0 mA/cm2. These output values match the performance of an Ag screen‐printed solar cell and demonstrate the possibility of commercializing an inexpensive HIT solar cell with high efficiency.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.