Abstract

An extremely high sensitivity for light detection is possible with a thin layer of graphene, graphene oxide and reduced graphene oxide on a light-absorbing substrate, such as silicon (Si). In the detection of weak light signals, graphene on Si devices can outperform traditional photo detectors. Due to their remarkable features, two-dimensional (2D) materials have attracted a lot of attention from the scientific community ever since the discovery of graphene. Dangling bonds are absent from 2D layered materials, which also feature optoelectronic characteristics and a layer-dependent tunable bandgap. Graphene oxide and reduced graphene oxide is synthesised in this paper and photo detection properties of reduced graphene oxide is explored for the wide optical range from 450 nm to 550 nm at 1 V and 30 μW intensity. Highest responsivity 0.14 A/W is obtained at 550 nm. The response time to achieve maximum photocurrent response is also obtained for the illuminated wavelengths of light.

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