Development of pure O2 cluster ion beam assisted deposition system

Abstract

A newly designed high-current gas cluster ion beam (GCIB) assisted deposition system was developed and O2 cluster ion current over 100μA was obtained with no monomer ions. High-current GCIB realizes high-rate deposition on large substrates. In this system, Ta2O5 and SiO2 films were deposited on Si and glass substrates by O2-GCIB assisted deposition. Very smooth surface (Ra<0.5nm), high refractive index (n=2.2) and dense structure were obtained by optimizing deposition conditions. Also, more efficient surface smoothing and low damage irradiation effects were obtained by removing O2 monomer ions from O2-GCIB by using a permanent magnet.