Abstract
In recent years, silicon carbide (SiC) power transistors have received significant attention because of their high switching frequency, high stability to operating temperatures, and low on-resistance, which makes it possible to replace traditional silicon-based devices in motor drives. This paper presents a comprehensive parasitic parameter analysis and development of a permanent magnet synchronous motor (PMSM) drive based on SiC power transistors. The ANSYS® Q3D software is used to analyze the parasitic parameters, current distribution, and current density of the driving circuit board, while the Twin Builder software is applied to integrate the SPICE model of the circuit board, including the gate driver and SiC device, to establish a highly efficient PMSM drive. Finally, the SiC-based drive is verified on a testbench with a 1.7 kW PMSM by a field-oriented control (FOC) scheme, and the performance is also validated by experimental results on a motor testing workbench.
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