An accurate electro-thermal model of SiC power mosfets for fast simulations

Abstract

A methodology for developing an electro-thermal model for silicon carbide (SiC) power transistors, is presented. The primary target of a such methodology is to address a detailed system level mixed signal multi-domain simulation, where simulation time and accuracy are the key factors. The adopted methodology aims to provide a compact model usable in a high-level behavioral description of any SiC-based power system. The modeling of an existing SiC MOSFET produced by STM is then described as an application. A preliminary simulation was carried out to compare the results to real device characteristics. A scenario of an inverter circuit based on SiC power transistors is also provided. Using the proposed macromodel, the final results show a reduction in simulation time of the inverter by a factor of 40 with respect to the original PSpice simulation time.