Development of Particle Detecting Technology for Measurement Slurry Particle Property in Chemical Mechanical Polishing Process

Abstract

Recently, particle size and analysis technology are used for various industry filed and become very important. Because small particle can affect to manufacture process and product yield. Especially. As design rule of semiconductor device is miniaturizing to 10 nm class. Because of this, very fine particle which size is below 100 nm can affect to the wafer as shown Fig. 1. In addition to this, after chemical mechanical polishing (CMP) process many defects can occur by fine particles in CMP slurry which are remain on the wafer. In this reason, we need a technology which is measure the particle property of slurry in CMP process.In this study, particle detecting technology has been investigated which is can detect a particle in the CMP slurry for wafer polishing. In this experiment, single particle sizing system (SPOS) is used for particle detecting in CMP slurry. The SPOS system is a single particle detecting system which system is the principle of measuring scattering light generated by particles. It can get a high resolution from detecting a small size particle also analysis of particle property such as size, shape and so on.Fig, 2 shows a schematic of the experiment set-up and result, which experiment was consisting of five devices that is He-Ne laser, laser power meter, tubing pump and lens system. The experimental principle is firstly preparing the solution which contain particles to flow the quartz tube. Second, prepare the focusing and collecting lens system. Third, aligning the laser to the quartz tube where the solution flows and turning it on will cause the laser light to hit the particles present in the solution, which will measure the scattered light with a laser power meter. Figure 1