Abstract
A new type of hydrogenated amorphous silicon (a-Si:H) thin film with nanowires was formed by applying a bias electric field along the growth surface of an a-Si:H thin film during a glow discharge in monosilane gas. Analyses of structural, electrical and optical properties revealed that nanoparticles with a radius of approximately 20 nm were formed and grew into nanowires with a length of 1 µm on the a-Si:H thin film surface as the bias electric field increased. In comparison with the carrier mobility of a conventional a-Si:H thin film, the carrier mobility of the nanowire estimated from the anisotropic electric conductivity was inferred to increase by up to three orders of magnitude or more. The dependence of the electric field on the optical band gap implies that quantum wires exist in the nanowire. These results suggest that quantum wires were formed in nanowires because of the effect of the bias electric field on the surface reaction of radicals along the growth surface during glow discharge.
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