Abstract
A method is developed for producing nano-structured titanium oxide thin films using H2 gas interaction with titanium thin film at a high temperature. These nano-structured thin films have been formed on a quartz crystal substrate. Titanium (Ti) thin films were deposited on the quartz crystal using a RF magnetron sputterer. The samples were placed in the oven at 500-800°C for 5 hours. The gas mixture of 1% H2 in N2 was introduced in the oven. The process of Ti annealing in the presence of H2 carves Ti films into nano-structure shapes. The process is a gas-solid interaction. Thin films were characterised using Scanning Electron Microscopes (SEM) and X-Ray Diffraction (XRD) technique. The nano structures formed have dimensions in a range of 25nm - 150nm obtained after gas carving.
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