Electrical Properties and Surface Morphology Study on the Effect of Annealing Temperature of One Layer Titanium Dioxide Thin Films Prepared by Sol-Gel Method

Abstract

Sol‐gel using spin coating technique is one of the promising methods to prepare titanium dioxide thin film. Surface morphology and electrical properties of the titanium dioxide thin films prepared by this technique were studied. Titanium dioxide thin films were deposited on glass and silicon substrates. By varying the parameters of annealing temperature, thin films deposited on the glass and silicon substrates were characterized using current‐voltage (I‐V) measurement and scanning electron microscopy (SEM). Annealing temperature at T = 350° C, 400° C, 450° C and 500° C have been observed. The result indicated electrical properties of titanium dioxide thin films were changed with annealing temperatures. The SEM investigation showed that grain size of titanium oxide increased with higher annealing temperature. Furthermore, the SEM result indicated lattice matching between titanium dioxide and substrate is important to produce good quality titanium dioxide thin film after annealing process. For the electrical properties result, shows that n‐type of nanostructured TiO2 thin film has been successfully deposited onto silicon substrates and ohmic contact properties between aurum (Au) metal contact and nanostructured TiO2 thin film has also successfully measured. The results suggest that surface porosity, electrical properties and surface morphology of titanium dioxide could be could be effected by changing annealing temperatures for electronic devices application.