Abstract
Since 2002, we have been developing a carbon dioxide (CO2) laser-produced tin (Sn) plasma (LPP) extreme ultraviolet (EUV) light source, which is the most promising solution because of the 13.5 nm wavelength high power (>200 W) light source for high volume manufacturing. EUV lithography is used for its high efficiency, power scalability, and spatial freedom around plasma. We believe that the LPP scheme is the most feasible candidate for the EUV light source for industrial use. We have several engineering data from our test tools, which include 93% Sn ionization rate, 98% Sn debris mitigation by a magnetic field, and 68% CO2 laser energy absorption rate. The way of dispersion of Sn by prepulse laser is key to improve conversion efficiency (CE). We focus on prepulsed laser pulsed duration. When we have optimized pulse duration from nanosecond to picosecond, we have obtained maximum 4.7% CE (CO2 laser to EUV; our previous data was 3.8%) at 2 mJ EUV pulse energy. Based on these data we are developing our first light source as our product: “GL200E.” The latest data and the overview of EUV light source for the industrial EUV lithography are reviewed in this paper.
Highlights
Since 2002, Gigaphoton/Komatsu have been developing a laser plasma produced (LPP) extreme ultraviolet (EUV) light source based upon carbon dioxide (CO2) laser-produced tin (Sn) plasma
In order to meet the performance requirements for an EUV light source, we have focused on three enabling technologies: (1) high conversion efficiency (CE), efficiency from CO2 laser to EUV light energy; (2) debris mitigation functionality, Sn debris mitigation from optical components; (3) CO2 laser power usage, efficiency CO2 laser energy into Sn
We report on the present development status of our LPP light source for EUV lithography (EUVL) for high volume manufacturing (HVM)
Summary
Since 2002, Gigaphoton/Komatsu have been developing a laser plasma produced (LPP) extreme ultraviolet (EUV) light source based upon carbon dioxide (CO2) laser-produced tin (Sn) plasma. We believe that the CO2-Sn-LPP scheme is the most feasible candidate for the EUV light source for HVM. In order to meet the performance requirements for an EUV light source, we have focused on three enabling technologies:. (1) high conversion efficiency (CE), efficiency from CO2 laser to EUV light energy;. (3) CO2 laser power usage, efficiency CO2 laser energy into Sn. We have investigated how Sn droplets under laser irradiation generate EUV light. Investigated is Sn behavior, in vacuum environment, under irradiation of laser beams. We report on the present development status of our LPP light source for EUVL for HVM
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