Abstract
Indium selenide (InxSey) thin films have been grown and characterised for incorporation as buffer layers in the FTO/CdS interface of CdS/CdTe solar cells. This is to test its suitability in avoiding pinholes by covering the glass/FTO surface to remove shorting of devices. Buffer layers are generally integrated as inter-layers to improve thin film solar cell device parameters for efficient solar energy conversion. The films were grown using electrodeposition and were characterised using a wide range of analytical techniques. The prepared films show amorphous behaviour even after heat-treatment and have good adhesion to the glass/FTO substrates. The films show p-type in electrical conduction in both as-deposited and heat-treated forms with bandaps in the range of 1.80 1.90 eV. Preliminary devices integrating InxSey as a buffer layer in glass/FTO/InxSey/CdS/CdTe/Au structure show encouraging device parameters (Voc, Jsc, and FF). The other two layers used, CdS and CdTe are also grown using electrodeposition in an aqueous medium. The results of characterisation and device fabrication will be discussed in this paper.
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