Abstract
An extreme ultraviolet (EUV) interference lithographic exposure tool was installed at the long undulator beamline in NewSUBARU to evaluate EUV resists for 25nm node and below. The two-window transmission grating of 40 and 50nm half pitch (hp) were fabricated with techniques of spattering, electron beam lithography, dry etching and wet etching. hp patterns (20 and 25nm) of chemically amplified resist (CAR) and non-CAR were successfully replicated using the EUV interference lithographic exposure tool.
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